All transistor datasheet pdf. 1 collector2 baseAPPLICATIONS3 emitter High-spe 2N5551 Rev.

All transistor datasheet pdf. The data of Figure 6 is based on TC = 25 C; TJ(pk) is all mosfet. 2. 2V to 37V ·Output Current In Excess of 1. Electronic Component Catalog AOUS66414 Datasheet AOTE21115C MOSFET. lm317t Datasheet, Design, MOSFET, Power. Excellent Safe Operating Area. , the most complete transistor data sheets and transistor databases on the market. stps2045ct Datasheet, Design, MOSFET, Power. PNP high-voltage transistor 2N5401 DATA SHEET STATUS Notes 1. download 1 file 0. Empty or zero fields are ignored during the search! How to choose a replacement for a bipolar transistor ๐Ÿ”—. 1 Vdc (Max) @ IC = 4 Adc. Transistor Database. 22,348 18tq datasheet pdf. Size:51K philips 2n3904 3. 2A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - MJE13001G-x-AB3-A-R SOT-89 E C B Tape Reel- MJE13001G-x-AB3-F-R SOT-89 B C E Keywords. Datasheet: Description: Schurter Inc. Equivalent Type Designator: AOUS66616 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdโ“˜ - Maximum Power Dissipation: 92. Datasheet: 228Kb/4P. pdf 2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V tp4812nr n-channel enhancement mode field effect transistor features high density cell design for ultra low on-resistance improved shoot-through fom both normal and pb free product are available :normal : 80~95% sn, 5~20% pb pb free: 99% sn above mechanical data we declare that the material of product compliance with rohs reuirements. Description: TRANSISTOR TRANSISTOR LOGIC. This Datasheet contains final specifications. F Mar. Collector−Emitter Saturation Voltage − VCE(sat) = 1. ap431-series Datasheet, Design, MOSFET, Power. pdf UNISONIC TECHNOLOGIES CO. / Applications General purpose and switching application. pdf. stps2045ct RoHS, Compliant, Service, Triacs, Semiconductor. EMITTER Amplifier applications As complementary type, the NPN transistor 2N3904 is 2. 2sk1466 Database, Innovation, IC, Electricity Part #: 2N3904. 5 W |Vds|โ“˜ - Maximum Drain-Source Voltage: 20 V |Vgs|โ“˜ - Maximum Gate-Source Voltage: 12 V |Id|โ“˜ - Maximum Drain Current: 7 A UNISONIC TECHNOLOGIES CO. 2SA1281 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SA1281 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. MOSFET. SINGLE PAGE PROCESSED JP2 ZIP download. Part #: TRANSIPILLARS. Equivalent Type Designator: AOTE32136C Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdโ“˜ - Maximum Power Dissipation: 1. Please consult the most recently issued data sheet before initiating or completing a design. INNOVATION CATALOG bc547. Transistor Voltages Three different types of voltages are involved in the description of transistors and transistor circuits. irfb4110g. Datasheet pdf. AOUS66616 MOSFET. / Equivalent Circuit As is common with most switching transistors, resistive switching is specified at 25°C and has become a benchmark for designers. Datasheet: 60Kb/4P. bjt; mosfet; igbt; scr; smd code; packages; apps mosfet. All Transistors. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Manufacturer: SEMPO ELECTRONIC Limited. onsemi. pdf DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N3904NPN switching transistor1999 Apr 23Product specificationSupersedes data of 1997 Jul 15Philips Semiconductors Product specificationNPN switching transistor 2N3904FEATURES PINNING Low current (max. stps2045ct Database, Innovation, IC, Electricity Order this document by LM358/D LM358, LM258, LM2904, LM2904V Dual Low Power Operational Amplifiers DUAL DIFFERENTIAL INPUT Utilizing the circuit designs perfected for recently introduced Quad Operational Amplifiers, these dual operational amplifiers feature 1) low OPERATIONAL AMPLIFIERS power drain, 2) a common mode input voltage range extending to ground/VEE, 3) single supply or split su a7w datasheet pdf. Operating Junction Temperature (Tj): 175 °C Transition Frequency (ft): 130 MHz IRFB4110 Transistor Datasheet, IRFB4110 Equivalent, PDF Data Sheets. TOTAL: 148564 transistors. Manufacturer: NTE Electronics. Searched Keyword: TRANSISTOR. They are: Transistor supply voltages: VCC, VBB. 5. Part #: BC182. 05. pdf isc N-Channel MOSFET Transistor 2SK682DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSlow onresistanceHigh speed switchingLow drive currentNo secondary breakdownSuitable f phe13009. 0 Vdc Collector Current − Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5. Package: SOT-23. 2. 1 collector2 baseAPPLICATIONS3 emitter High-spe 2N5551 Rev. All Transistors Datasheet. Electronic Supply. File Size: 140Kbytes. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i. 9 W Maximum Collector-Base Voltage |Vcb|: 180 V Maximum Collector Current |Ic max|: 0. Transistor terminal voltages: VC, VC, VE Voltages across transistor junctions: VBE, VCE, VCB All of these voltages and their polarities are shown on Figure 5 for the npn BD139 Datasheet (PDF) - Motorola, Inc: Part # BD139: Download BD139 Download: File Size 100. 270Kb/3P. Part AO3407 MOSFET. Manufacturer: Micro Electronics. Size:236K inchange semiconductor 2sk682. A transistor is a type of semiconductor device that can be used to amplify or switch electronic signals. / Features , 2N5401 High voltage, complementary Pair with 2N5401. Cross Reference Search. 200 mA)PIN DESCRIPTION Low voltage (max. Mouser offers inventory, pricing, & datasheets for Transistors. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. e. Common applications include signal amplification, small-signal switching, voltage regulation, and as a building block in electronic circuits. MAC97A6 Datasheet Page #1. Page: 4 Pages. File Size: 301Kbytes. -2016 DATA SHEET / Descriptions TO-92(R) NPN Silicon NPN transistor in a TO-92(R) Plastic Package. DC Current Gain − hFE = 20−70 @ IC = 4 Adc. lm317t Database, Innovation, IC, Electricity The company was known for its innovation in the development of the first commercial transistor and for its contributions to the advancement of the integrated circuit technology. Size:439K utc 2sd669 2sd669a. 1 Results. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. Rev. 5 W |Vds|โ“˜ - Maximum Drain-Source Voltage: 60 V |Vgs|โ“˜ - Maximum Gate-Source Voltage: 20 V |Id|โ“˜ - Maximum Drain Current: 92 A . , LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance isc Adjustable Voltage Regulator LM317T FEATURES ·Output Voltage Range :1. Page: 8 Pages. Electronic Component Catalog AOUS66923 Datasheet a transistor: average junction temperature and second breakdown. Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors. File Size: 98Kbytes. Transistors PNP Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 5. Parameters and Characteristics. Addeddate 2017-07-29 00:00:22 PDF download. BASE Recommended This transistor is also available in the SOT-23 case with 3. Description: mplifier Transistors(NPN Silicon). datasheet. BC547 Rev. Part #: NTE7214. , Ltd TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR (PNP) TO-92 FEATURE PNP silicon epitaxial planar transistor for switching and 1. Datasheet: 159Kb/1P. Page: 6 Pages. isc N-Channel MOSFET Transistor IRFB4110G IIRFB4110GFEATURESStatic AOTS32334C MOSFET. Download. AOUS66920 Transistor Datasheet, AOUS66920 Equivalent, PDF Data Sheets. Equivalent Type Designator: AOTE21115C Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdโ“˜ - Maximum Power Dissipation: 1. WeEn Semiconductors Product data sheet Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTIONThe PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc Keywords. Electronic Component Catalog AOUS66920 Datasheet Searched Keyword: TRANSISTORS. irfz44n | irf3205 | irf740 | 20n60 | 50n06 | irf840 | irf540 | irf1404 0. lm317 RoHS, Compliant, Service, Triacs, Semiconductor. 40 V). Manufacturer: ON Semiconductor. Description: Amplifier Transistors Amplifier Transistors. Datasheet. 1 A Max. Description: Amplifier Transistors(NPN Silicon). INNOVATION CATALOG. 5 W |Vds|โ“˜ - Maximum Drain-Source Voltage: 20 V |Vgs|โ“˜ - Maximum Gate-Source Voltage: 8 V |Id|โ“˜ - Maximum Drain Current: 4. lm317t RoHS, Compliant, Service, Triacs, Semiconductor. File Size: 145Kbytes. 4 V NPN high-voltage transistors 2N5550; 2N5551 DATA SHEET STATUS Notes 1. ap431-series RoHS, Compliant, Service, Triacs, Semiconductor. Size:236K toshiba 2sc5200r 2sc5200o. 1. 12 1 Publication Order Number: 2N3773/D NPN Power Transistors 2N3773 The 2N3773 is a PowerBase power transistor designed for high power audio, disk head positioners and other linear applications. 8 — 18 November Jul 29, 2017 ยท Transistor Handbook. com Semiconductor Components Industries, LLC, 2013 October, 2024 − Rev. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 0 mW Part #: 2N5551. Manufacturer: Galaxy Semi-Conductor Holdings Limited. Part #: BC547. 2sk1466 Datasheet, Design, MOSFET, Power. 9. Including mosefet, igbt, scr, etc. halfpage M3D186 2N3904 NPN switching transistor 1999 Apr 23 Product specification Supersedes data A. I77 ® Datasheet: 43Kb/1P. It consists of three or four layers of a material called a semiconductor, with each layer having a different electrical property. 4 W |Vds|โ“˜ - Maximum Drain-Source Voltage: 30 V |Vgs|โ“˜ - Maximum Gate-Source Voltage: 20 V |Vgs(th)|โ“˜ - Maximum Gate-Threshold Voltage: 2. Description: General Purpose Transistors(NPN Silicon). 701-4939 Features • SOT-23 Plastic-Encapsulate Transistors NPN Silicon • Capable . Equivalent Type Designator: AOTS32334C Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdโ“˜ - Maximum Power Dissipation: 2. 84. However, for designers of high frequency converter circuits, the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100 C. File Size: 188Kbytes. 1% Line and Load Regulation ·Floating Operation for High Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·They are designed to supply more than 1. TRANSIPILLARS : 270Kb / 3P: Transipillars, a rugged insulated mounting system 13. . TRANSISTOR Datasheet. lm317 Database, Innovation, IC, Electricity Applications: C945 transistors are widely used in low- to medium-power applications where NPN transistor amplification or switching is required. Description: NPN SILICON PLANAR EPITAXIAL TRANSISTORS. , LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0. 5A ·0. Description: General Purpose Transistors(PNP Silicon). BJT; MOSFET; IGBT; diodes Rev. Description: Silicon Epitaxial Planar Shenzhen Tuofeng Semiconductor Technology Co. Part #: S8050. Description: Transipillars, a rugged insulated mounting system. Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. 60,996 Results. 9 A Keywords. Part #: BC548. 5A of load current with an output AOUS66923 Transistor Datasheet, AOUS66923 Equivalent, PDF Data Sheets. -2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. Page #2. Equivalent Type Designator: AO3407 Marking Code: A79TF_X7*_A7 Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdโ“˜ - Maximum Power Dissipation: 1. The datasheet is for reference information only. / Applications General purpose high voltage amplifier. The company was known for its innovation in the development of the first commercial transistor and for its contributions to the advancement of the integrated circuit technology. download 1 file . 81 Kbytes: Page 4 Pages : Plastic Medium Power Silicon NPN Transistor Part #: 2N3906. 2020: Search Partnumber : Start with "TRANSI"-Total : 106 ( 1/6 Page) DATA SHEET www. Part #: 2N2222. , the transistor must not be subjected to greater dissipation than the curves indicate. Fairchild became a leading supplier of power semiconductors, analog and mixed-signal integrated circuits, and other semiconductor products. Description ๏ปฟMAC97 Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application small signal npn transistor preliminary data silicon epitaxial planar npn transistor to-92 package suitable for through-hole pcb assembly the pnp complementary type is 2n3906 applications well suitable for tv and home appliance equipment small load switch transistor with y1-smd_code_mmss8050 datasheet pdf. Features. 2sk1466 RoHS, Compliant, Service, Triacs, Semiconductor. / Features High Voltage, Low Noise. Datasheet: 270Kb/3P. ap431-series Database, Innovation, IC, Electricity Manufacturer: Part # Datasheet: Description: ON Semiconductor: 2SC6144SG: 240Kb / 7P: Bipolar Transistor 50V, 10A, Low VCE(sat) NPN TO-220F-3FS September, 2013 . , LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD669xL-x-AA3-R 2SD669xG-x-AA3-R SOT-223 B C E Tape Reel2SD669xL-x-AB3-R Manufacturer: Part No. Electronic Components Datasheet Search SMDTRANSISTOR Datasheet, PDF : Search Partnumber : Start with Marking: J3Y. Keywords. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. lm317 Datasheet, Design, MOSFET, Power. AOUS66414 Transistor Datasheet, AOUS66414 Equivalent, PDF Data Sheets. POWER MOSFET, IGBT, IC, TRIACS DATABASE. Size:425K utc 10n60l-ta3-t 10n60g-ta3-t 10n60l-tf3-t 10n60g-tf3-t 10n60l-tf1-t 10n60g-tf1-t 10n60l-tf2-t 10n60g-tf2-t. Manufacturer: Schurter Inc. E Mar. 5 W |Vds|โ“˜ - Maximum Drain-Source Voltage: 30 V |Vgs|โ“˜ - Maximum Gate-Source Voltage: 20 V |Id|โ“˜ - Maximum Drain Current: 8 A AOTE32136C MOSFET. 2n3904_3 datasheet pdf. mlnryk chpft duxgf widets csktt szkdizf emvgt qlrq jqqxieeo ams